Currently, we are moving forward by contributing and investing into best-in-class Ultra-wide-bandgap semiconductor (UWBGS) material. These are a subset of wide-bandgap semiconductor (WBGS) materials. The wider ULTRA bandgap is particularly important for allowing wide bandgap devices to operate at higher temperatures, on the order of 300 °C. UWBGS made from Carbon/Diamond are best-in-class due to the unique combination of thermal and chemical stability, and it is because there scattered electrons produce superior electron-hole pairs, in addition to, low thermal expansion and high optical transparency in a wide spectral range, synthetic diamond is fast becoming the most desired and popular material within the field of electronics. and we will make a significant difference in this field. The electron–hole pair is the fundamental unit of generation and recombination, corresponding to an electron transitioning between the valence band and the conduction band where the generation of an electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition. 

Shockley–Read–Hall (SRH) process
In Shockley-Read-Hall recombination, also called trap-assisted recombination, the electron in transition between bands passes through a new energy state (localized state) created within the band gap by an impurity in the lattice; such energy states are called deep-level traps. The localized state can absorb differences in momentum between the carriers, and so this process is the dominant generation and recombination process in silicon and other indirect bandgap materials.